hexfet ? power mosfet pd - 93940 IRF7701 parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v 10 i d @ t a = 70c continuous drain current, v gs @ -4.5v 8.0 a i dm pulsed drain current ? 80 p d @t a = 25c power dissipation 1.5 p d @t a = 70c power dissipation 0.96 linear derating factor 12 mw/c v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c parameter max. units r q ja maximum junction-to-ambient ? 83 c/w thermal resistance absolute maximum ratings w www.irf.com 1 6/21/00 hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design , that inter- national rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. the tssop-8 package, has 45% less footprint area of the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the tssop-8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. description l ultra low on-resistance l p-channel mosfet l very small soic package l low profile (< 1.1mm) l available in tape & reel tssop-8 v dss r ds(on) max i d 0.011@v gs = -4.5v -10a -12v 0.015@v gs = -2.5v -8.5a 0.022@v gs = -1.8v -7.0a 4 = g 3 = s 2 = s 1 = d 1 2 3 4 g d s 5 6 7 8 8 = d 7 = s 6 = s 5 = d
IRF7701 2 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.5a, v gs = 0v ? t rr reverse recovery time CCC 52 78 ns t j = 25c, i f = -1.5a q rr reverse recoverycharge CCC 53 80 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -80 -1.5 a ? when mounted on 1 inch square copper board, t<10 sec s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.006 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.011 v gs = -4.5v, i d = -10a ? r ds(on) static drain-to-source on-resistance CCC CCC 0.015 v gs = -2.5v, i d = -8.5a ? CCC CCC 0.022 v gs = -1.8v, i d = -7.0a ? v gs(th) gate threshold voltage -0.45 CCC -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 21 CCC CCC s v ds = -10v, i d = -10a CCC CCC 1.0 v ds = -12v, v gs = 0v CCC CCC -25 v ds = -9.6v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -8.0v gate-to-source reverse leakage CCC CCC 100 v gs = 8.0v q g total gate charge CCC 69 100 i d = -8.0a q gs gate-to-source charge CCC 9.1 14 nc v ds = -9.6v q gd gate-to-drain ("miller") charge CCC 21 32 v gs = -4.5v ? t d(on) turn-on delay time CCC 19 CCC v dd = -6.0v t r rise time CCC 20 CCC i d = -1.0a t d(off) turn-off delay time CCC 240 CCC r d = 6.0 w t f fall time CCC 220 CCC v gs = -4.5v ? c iss input capacitance CCC 5050 CCC v gs = 0v c oss output capacitance CCC 1520 CCC pf v ds = -10v c rss reverse transfer capacitance CCC 1120 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w i dss drain-to-source leakage current na ns
IRF7701 www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0.01 0.1 1 10 100 0.1 1 10 20 s pulse width t = 25 c j top bottom vgs -7.00v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 0.1 1 10 20 s pulse width t = 150 c j top bottom vgs -7.00v -4.5v -3.0v -2.5v -1.8v -1.5v -1.2v -1.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.0v 0.1 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -10v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -10a fig 4. normalized on-resistance vs. temperature
IRF7701 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 20 40 60 80 100 0 2 4 6 8 10 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -10a v = -9.6v ds 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 -v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRF7701 www.irf.com 5 fig 10. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
IRF7701 6 www.irf.com fig 12. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage 0 20406080100 -i d , drain current (a) 0.005 0.010 0.015 0.020 r ds (on) , drain-to-source on resistance ( w ) v gs = -2.5v v gs = -4.5v 1.5 2.5 3.5 4.5 -v gs, gate -to -source voltage (v) 0.00 0.01 0.02 0.03 0.04 0.05 r ds(on) , drain-to -source on resistance ( w ) i d = -10a fig 13b. gate charge test circuit fig 13a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + -
IRF7701 www.irf.com 7 fig 14. threshold voltage vs. temperature fig 15. typical power vs. time 0.01 0.10 1.00 10.00 100.00 time (sec) 0 10 20 30 40 power (w) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.00 0.20 0.40 0.60 0.80 -v gs(th) , variace ( v ) i d = -250a
IRF7701 8 www.irf.com example: t his is an irf7702 dat e code (yw) part number lot code (xx) date code examples: 9503 = 5c 9532 = ef 7702 xxyw work week 27-52, alphanumeric year code (a,b, ...etc.) 2000 k 52 51 50 z y x 2001 1995 1999 1998 1997 1996 1994 2003 2002 ye ar aa 27 e h g f j d c b 30 29 28 d c b table 2 y wor k we e k 26 w z work week 1-26, numeric year code (1,2, ....et c.) 2003 1997 2000 1998 1999 1996 1995 1994 2002 2001 ye ar 3c 03 7 8 9 0 25 24 5 6 404 y x d wor k 2 1 yweek 02 01 table 1 b a w tssop-8 part marking information ? 13" 16mm 1. t ape & reel ou t line conf orms t o e ia-481 & e ia-541. not e s : 16 mm 8 mm feed direction 8lt s s op (mo-153aa) tssop-8 tape and reel
IRF7701 www.irf.com 9 tssop-8 package outline ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 6/00
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